So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering ( dc-SSS) only. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate.

Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. At standard magnetron sputtering conditions (argon pressure of âˆ❀.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. International Nuclear Information System (INIS) Pulsed dc self-sustained magnetron sputtering

The relation of disorder amorphous network with structural and compositional properties will be discussed. The amorphous network of the films tends to be more disorder with increasing methane flow rate. Increasing methane flow rate has an effect on increasing Tauc gap and decreasing disorder parameter. Disorder parameter has been obtained from the optical absorption coefficient Î± (E using Tauc plot. The optical absorption coefficients have been performed by UV-VIS (ultra violet-visible reflectance and transmittance spectroscopy. The films were deposited using silicon target in argon and methane gas mixtures. Disorder amorphous network of amorphous silicon carbon (a-SiC:H films has been investigated for films prepared by dc sputtering method. Studi Disorder Lapisan Tipis Amorf Silikon Karbon (A-Sic:H Hasil Deposisi Metode Dc Sputteringĭirectory of Open Access Journals (Sweden)įull Text Available Disorder Study of Amorphous Silicon Carbon (a-SiC:H Films Deposited by DC Sputtering Method.

Teks persuasif lingkungan hidup